Let me preface this by clearly stating I do not claim to have a vast knowledge of electrical analysis. There are also additional factors that can be seen in the data sheets showing how to derate the limits under various conditions. Temperature, voltage, current, along with other factors, can change characteristics.
It is worth mentioning the RDS
on will depend on the voltage. If you look at the
IRLB3034PbF data sheet there are two listings for RDS
on, one with V
GS at 10V and another at 4.5V. If your design simply using the battery voltage to trigger the gate, 4.2V, you may experience higher resistance than shown. This higher resistance will lead to more heat dissipation of the MOSFET. Below shows some calculations for determining an estimate for heat dissipation.
Where I= current drain.
VGS = 10V | VGS = 4.5V |
RDSon = 0.0017 ohm | RDSon = 0.0020 ohm |
P=302 * 0.0017 | P=302 * 0.0020 |
P=1.52W | P=1.80W |
DIFFERENCE: | 0.28W |
Now at a 30A current drain both calculated powers fall within the 2W desired for the TO220 package without additional heat sinks. So lets up the current to say 34A.
VGS = 10V | VGS = 4.5V |
RDSon = 0.0017 ohm | RDSon = 0.0020 ohm |
P=342 * 0.0017 | P=342 * 0.0020 |
P=1.96W | P=2.31W |
DIFFERENCE: | 0.35W |
Now we see that when the MOSFET is triggered by a 4.5V source the higher RDS
on at 34A will cause the MOSFET to overheat. Of course the difference between the wattage increases dramatically as the current is squared. Here is an example at 60A, though I would not recommended running 60A even on a parallel setup. Though theoretically the available amps are doubled, realistically this is not the case.
VGS = 10V | VGS = 4.5V |
RDSon = 0.0017 ohm | RDSon = 0.0020 ohm |
P=602 * 0.0017 | P=602 * 0.0020 |
P=6.12W | P=7.20W |
DIFFERENCE: | 1.08W |
In this case additional heat sinks would need to be added due to the possibility of the MOSFET failing due to overheating. A MOSFET failing can be an issue as they tend to fail closed and would start to auto fire. This is a reason for not taxing you batteries by going beyond their continuous discharge limit. Should a failure occur, such as the MOSFET, the build will not put your batteries at a high risk of thermal runaway as they will not be exceeding their limits.