I'm usually of the opinion that N-channel MOSFETs make better switches, because they tend to have lower resistance [RDS(on)]: i.e. low-side switching. Assuming you'll be using just one LiPo (nominal 3.7V) when picking a FET to work with, look for one a VGS(th) <1.5V, enough current to support your application +50% [ID(on)] so it doesn't overheat, and appropriate breakdown voltage (VDS > 4.2V)
Here's a very nice and easy to understand guide:
Using the Power MOSFET as a Switch - MOSFET Switching
Here's the basics of FET switching:
- use N-channel FETs to switch the ground (low-side switching). Gate needs a pull-down resistor for OFF, and gets connected to the (+) side of the batt for ON
- use P-channel FETs to switch the (+) connection (high-side). Gate needs a pull-up resistor for OFF, and gets connected to ground for ON.
In general, P-FETs have higher resistance than N-FETs.
In a P-channel FET, current flows and gets switched in the direction Source->Drain. The body diode is reverse biased with respect to S->D
In contrast, for a N-channel FET, current flows and gets switched in the direction Drain->Source. The body diode is forward biased with respect to S->D
The resistor is used to bring the Gate potential to reference when the switch is off. It also functions as a current-limiting resistor when the switch is on, so you don't short the battery. You want the highest resistance value that accomplishes a full off state with the switch open. You'll need to play with the resistor value to get the desired results. I'm guessing it would be between 10K and 50K. This is where a variable resistor comes in really handy.