nicotime, RDS-ON is the resistance of the fully opened mosfet. Lower the RDS-ON, lower power (and voltage) loss on it. For our purposes RDS-On 5-10-40 mohm is OK. Typically 10 mohms.
But I told about another thing (sorry, jhonuts). There is another very important parameter of mosfets - voltage on Gate which fully opens the transistor and gives us this low RDS-On. These voltages are different for different mosfets. And if you look at the datasheet, you have to find the VGS - voltage between gate and source, which provides fully opened mosfet (lowest RDS).
Oh, my poor English
P.S. Sometimes it's difficult to find the VGS in datasheet because this parameter is gradual. In this case watch a graphic which shows relation between the source-gate voltage and source-drain resistance.
I use IRLML6402 transistors in common. They are small enough and quite reliable even if I switch a step-up board with it. And, as a matter of fact, they fit perfectly to repair a burnt eGo boards: just desolder the dead mosfet and put IRLML6402 instead. Now your board will be something like Terminator-2
But I told about another thing (sorry, jhonuts). There is another very important parameter of mosfets - voltage on Gate which fully opens the transistor and gives us this low RDS-On. These voltages are different for different mosfets. And if you look at the datasheet, you have to find the VGS - voltage between gate and source, which provides fully opened mosfet (lowest RDS).
Oh, my poor English
P.S. Sometimes it's difficult to find the VGS in datasheet because this parameter is gradual. In this case watch a graphic which shows relation between the source-gate voltage and source-drain resistance.
I use IRLML6402 transistors in common. They are small enough and quite reliable even if I switch a step-up board with it. And, as a matter of fact, they fit perfectly to repair a burnt eGo boards: just desolder the dead mosfet and put IRLML6402 instead. Now your board will be something like Terminator-2
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